Image sensor

An image sensor comprising:

• a substrate comprising a pixel region, a through electrode region, and a power supply region between the pixel region and the through electrode region;
• a plurality of through electrodes in the through electrode region;
• a plurality of shared pixels separated from each other by a first trench isolation structure in the pixel region, each shared pixel of the plurality of shared pixels comprising a plurality of unit pixels, wherein the first trench isolation structure extends in the substrate in a vertical direction;
• a plurality of contact barriers between the plurality of shared pixels and overlapping the first trench isolation structure in the vertical direction;
• and
• a protection diode in the power supply region, the protection diode comprising a first impurity region where first power is supplied by any one of the plurality of through electrodes, and the protection diode being electrically connected to the plurality of contact barriers,
• wherein the plurality of shared pixels comprise a first shared pixel and a second shared pixel that are adjacent to each other, and each of the first shared pixel and the second shared pixel comprises a plurality of floating diffusion regions at different locations from each other and a plurality of source follower gates that are electrically connected to the plurality of floating diffusion regions, the plurality of source follower gates being arranged at different locations from each other, and
• in a plan view, each of the plurality of contact barriers is between one of the plurality of source follower gates of the first shared pixel and one of the plurality of source follower gates of the second shared pixel which face each other.

An image sensor comprising:

• a substrate comprising a pixel region, a through electrode region, and a power supply region between the pixel region and the through electrode region;
• a plurality of shared pixels comprising, in the pixel region, a first shared pixel and a second shared pixel which are adjacent to each other in a first horizontal direction, wherein each of the first shared pixel and the second shared pixel comprises a first source follower gate, a second source follower gate, a third source follower gate, a first sub-pixel with four first unit pixels sharing a first floating diffusion region, and a second sub-pixel with four second unit pixels sharing a second floating diffusion region;
• a first trench isolation structure in the substrate and configured to divide the plurality of shared pixels in the pixel region;
• a plurality of through electrodes in the through electrode region;
• a plurality of contact barriers having long axes in a second horizontal direction perpendicular to the first horizontal direction, the plurality of contact barriers being between the plurality of shared pixels, and the plurality of contact barriers overlapping the first trench isolation structure in a vertical direction;
• and
• a protection diode arranged in the power supply region, the protection diode comprising a first impurity region where first power is supplied by any one of the plurality of through electrodes, and the protection diode being electrically connected to the plurality of contact barriers,
• wherein, in each of the first shared pixel and the second shared pixel, the first source follower gate and the second source follower gate face each other in the first horizontal direction and are on opposite sides of each of the first shared pixel and the second shared pixel in the first horizontal direction, and the first source follower gate and the third source follower gate face each other in the second horizontal direction and are on one side of each of the first shared pixel and the second shared pixel in the first horizontal direction, and
• each of the plurality of contact barriers is between the second source follower gate of the first shared pixel and the first source follower gate and the third source follower gate of the second shared pixel.