Image sensing device

An image sensing device comprising:

• a first pixel group configured to include a first microlens, a first photoelectric conversion element overlapping a left region of the first microlens and configured to convert light incident to the first photoelectric conversion element into photocharges, and a second photoelectric conversion element overlapping a right region of the first microlens and configured to convert light incident to the second photoelectric conversion element into photocharges, and a first transfer gate located at a first position with respect to a center of the first pixel group and configured to transfer the photocharges generated by the first photoelectric conversion element to a first floating diffusion region of the first pixel group;
• and
• a second pixel group configured to include a second microlens, a third photoelectric conversion element overlapping an upper region of the second microlens and configured to convert light incident to the third photoelectric conversion element into photocharges, and a fourth photoelectric conversion element overlapping a lower region of the second microlens and configured to convert light incident to the fourth photoelectric conversion element into photocharges, and a second transfer gate located at the first position with respect to the center of the second pixel group and configured to transfer the photocharges generated by the third photoelectric conversion element to a second floating diffusion region of the second pixel group.

An image sensing device comprising:

• a first photoelectric conversion element configured to generate photocharges in response to an incident light and disposed to overlap an upper region of a first microlens;
• a second photoelectric conversion element configured to generate photocharges in response to the incident light and disposed to overlap a lower region of the first microlens;
• a floating diffusion region configured to accumulate photocharges received from at least one of the first photoelectric conversion element or the second photoelectric conversion element;
• a first transfer gate disposed at a top-left side of the floating diffusion region and configured to transfer the photocharges generated by the first photoelectric conversion element to the floating diffusion region;
• and
• a second transfer gate disposed at a bottom-right side of the floating diffusion region and configured to transfer the photocharges generated by the second photoelectric conversion element to the floating diffusion region.