Backside-illuminated image sensor and method of manufacturing same
AssigneeDB HiTek Co., Ltd.
InventorIn Guen YEO
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Abstract
Proposed are a backside-illuminated image sensor and a method of manufacturing the same. More particularly, proposed are a backside-illuminated image sensor and a method of manufacturing the same, in which a plurality of align keys are formed in an epitaxial layer to be spaced apart from each other in the vertical direction, so that an align signal can be smoothly detected by an align key formed at a relatively shallow depth from a back surface of the epitaxial layer during a subsequent process.
Claims19
A backside-illuminated image sensor comprising:
- a pixel region;
- a surrounding region disposed adjacent to the pixel region;
- an epitaxial layer having a first surface and a second surface, which is disposed opposite to the first surface;
- a color filter disposed in the pixel region and on the second surface of the epitaxial layer;
- a planarization layer disposed on the color filter;
- a lens disposed in the pixel region and on the planarization layer;
- and
- a plurality of align keys disposed in the surrounding region and in the epitaxial layer,
- wherein the plurality of align keys has a plurality of first align keys disposed at a first depth from the second surface of the epitaxial layer and a plurality of second align keys disposed at a second depth from the second surface of the epitaxial layer, and wherein the first depth is different from the second depth.
A backside-illuminated image sensor comprising:
- a pixel region;
- a surrounding region disposed adjacent to the pixel region;
- an epitaxial layer having a first surface and a second surface, which is disposed opposite to the first surface;
- a photoelectric converter disposed in the pixel region and in the epitaxial layer;
- and
- at least one align key disposed in the epitaxial layer,
- wherein the epitaxial layer comprises:
- a first epitaxial layer defining an upper side of the epitaxial layer;
- and
- a second epitaxial layer disposed on a first surface of the first epitaxial layer, and wherein the at least one align key comprises:
- a first align key disposed in the surrounding region and in the first epitaxial layer;
- and
- a second align key disposed in the surrounding region and in the second epitaxial layer.
A method of manufacturing a backside-illuminated image sensor, the method comprising:
- forming a first epitaxial layer on a first surface of a first substrate;
- forming a first align key having a predetermined depth from a first surface of the first epitaxial layer toward a second surface of the first epitaxial layer in a surrounding region;
- forming a second epitaxial layer on the first surface of the first epitaxial layer;
- forming a second align key having a predetermined depth from a first surface of the second epitaxial layer toward a second surface of the second epitaxial layer in the surrounding region;
- forming a photoelectric converter in the second epitaxial layer;
- and
- forming a wiring region on the first surface of the second epitaxial layer.
Dependencies are inferred from the claim text.