Method for forming semiconductor device having fin structure

A method for forming a transistor device, comprising:

• forming a fin structure protruding from a substrate;
• disposing a first conductive line, a second conductive line and a third conductive line along a direction perpendicular to the fin structure to wrap a predetermined region, one of a source region and a drain region, and a gate region of the fin structure, respectively, wherein the second conductive line is formed between the first conductive line and the third conductive line;
• disposing a first conductive rail in a same layer as the first conductive line and the third conductive line, wherein the first conductive rail extends in a direction parallel to the fin structure to be laterally contacted by the first conductive line;
• and
• forming an isolation region on the substrate to separate the first conductive rail from the third conductive line, wherein a first side of the isolation region is contacted by the first conductive rail, and a second side of the isolation region opposite to the first side is contacted by one end of the third conductive line.

A method for forming a semiconductor device, comprising:

• forming a fin structure protruding from a substrate of the semiconductor device;
• forming a first conductive line on the substrate along a first direction to wrap a first portion of the fin structure;
• forming a second conductive line on the substrate along the first direction to contact a second portion of the fin structure different from the first portion;
• disposing a first conductive rail along a second direction different from the first direction to be laterally contacted by one end of the first conductive line;
• disposing a second conductive rail on the first conductive rail along the second direction;
• and
• forming an isolation region on the substrate to separate the first conductive rail and the second conductive rail from the second conductive line, wherein a first side of the isolation region is contacted by the first conductive rail and the second conductive rail, and a second side of the isolation region opposite to the first side is contacted by one end of the second conductive line.