Method for fabricating semiconductor device

A semiconductor device comprising:

• a substrate;
• a first fin disposed on the substrate;
• a second fin disposed on the substrate;
• a first gate electrode disposed on the first fin;
• a second gate electrode disposed on the second fin;
• a third gate electrode disposed on the first fin;
• a fourth gate electrode disposed on the second fin;
• a first source/drain disposed on the first fin, and disposed between the first gate electrode and the third gate electrode;
• a second source/drain disposed on the second fin, and disposed between the second gate electrode and the fourth gate electrode;
• a separation structure disposed on the substrate, disposed between the first fin and the second fin, disposed between the first gate electrode and the second gate electrode, and disposed between the third gate electrode and the fourth gate electrode;
• and
• a contact disposed on the separation structure, disposed on the first source/drain, and disposed on the second source/drain,
• wherein the separation structure contacts the first gate electrode, the second gate electrode, the third gate electrode and the fourth gate electrode, and
• the contact is disposed between the first gate electrode and the third gate electrode, and disposed between the second gate electrode and the fourth gate electrode.

A semiconductor device comprising:

• a substrate;
• a first fin disposed on the substrate;
• a second fin disposed on the substrate;
• a third fin disposed on the substrate;
• a first gate electrode disposed on the first fin and the second fin;
• a second gate electrode disposed on the third fin;
• a third gate electrode disposed on the first fin and the second fin;
• a fourth gate electrode disposed on the third fin;
• a first source/drain disposed on the first fin, and disposed between the first gate electrode and the third gate electrode;
• a second source/drain disposed on the second fin, and disposed between the first gate electrode and the third gate electrode;
• a third source/drain disposed on the third fin, and disposed between the second gate electrode and the fourth gate electrode;
• a separation structure disposed on the substrate, disposed between the second fin and the third fin, disposed between the first gate electrode and the second gate electrode, and disposed between the third gate electrode and the fourth gate electrode;
• and
• a contact disposed on the separation structure, disposed on the first source/drain, and disposed on the second source/drain,
• wherein a width of an upper portion of the separation structure is greater than a width of a lower portion of the separation structure,
• a bottom surface of the separation structure is disposed lower than an upper surface of the substrate, and
• the contact is disposed between the first gate electrode and the third gate electrode, and is disposed between the second gate electrode and the fourth gate electrode.