Semiconductor device structure and methods of forming the same

A semiconductor device structure, comprising:

• a first gate electrode layer;
• a first dielectric layer disposed in the first gate electrode layer;
• a second dielectric layer disposed in the first gate electrode layer;
• a conductive feature disposed in the first gate electrode layer between the first and second dielectric layers;
• a first conductive contact disposed over and in contact with the conductive feature;
• and
• a second conductive contact disposed over and in contact with the conductive feature, wherein the gate electrode layer is disposed between the first and second conductive contacts.

A method for forming a semiconductor device structure, comprising:

• forming a first sacrificial gate electrode layer and a second sacrificial gate electrode layer;
• replacing a portion of the first sacrificial gate electrode layer with a first dielectric layer and a portion of the second sacrificial gate electrode layer with a second dielectric layer;
• forming first, second, third, fourth source/drain regions, wherein the first and second source/drain regions are formed on opposite sides of a first end of the first dielectric layer, and the third and fourth source/drain regions are formed on opposite sides of a second end of the first dielectric layer;
• forming an interlayer dielectric layer over the first, second, third, and fourth source/drain regions;
• forming a conductive contact in the first and second dielectric layers and in the interlayer dielectric layer;
• flipping over the semiconductor device structure;
• and
• forming a conductive feature in the first and second dielectric layers, wherein the conductive feature is electrically connected to the conductive contact.