Enhanced isolation for on-chip current sensors
AssigneeWolfspeed, Inc.
InventorsMadankumar Sampath, Sei-Hyung Ryu
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a device active region comprising a first well, at least a portion of the first well being part of a first metal-oxide-semiconductor field-effect transistor (MOSFET), and a sensor region comprising a second well, at least a portion of the second well being part of a second MOSFET configured to mirror a current in the first MOSFET. A distance between an outer edge of the second well and an inner edge of the first well is constant or the distance decreases approaching one or more vertices of the second well.
Claims25
A semiconductor device, comprising:
- a device active region comprising a first well, at least a portion of the first well being part of a first metal-oxide-semiconductor field-effect transistor (MOSFET);
- and
- a sensor region comprising a second well, at least a portion of the second well being part of a second MOSFET configured to mirror a current in the first MOSFET,
- wherein a distance between an outer edge of the second well and an inner edge of the first well is constant or the distance decreases approaching one or more vertices of the second well.
A semiconductor device, comprising:
- a device active region comprising a first well, at least a portion of the first well being part of a first metal-oxide-semiconductor field-effect transistor (MOSFET);
- and
- a sensor active region comprising a second well, at least a portion of the second well being part of a second MOSFET that is configured to mirror a current in the first MOSFET,
- wherein, when viewed in plan view, the first well surrounds the second well and a distance between an outer edge of the second well and an inner edge of the first well at corners of the second well is less than or equal to the distance between the outer edge of the second well and the inner edge of the first well at sides of the second well.
-30. (canceled)
-40. (canceled)
A method of forming a semiconductor device comprising an on-chip current mirror, the method comprising:
- providing a device active region comprising a first well, at least a portion of the first well being part of a first metal-oxide-semiconductor field-effect transistor (MOSFET);
- providing a sensor active region comprising a second well, at least a portion of the second well being part of a second MOSFET configured to mirror a current in the first MOSFET;
- and
- providing an isolation structure between the first and second wells,
- wherein a distance between outer edges of the second well and inner edges of the first well is constant or the distance decreases approaching one or more vertices of the second well.
-55. (canceled)
A method of forming a semiconductor device comprising an on-chip current mirror, the method comprising:
- providing a device active region comprising a first well, the first well being part of a first metal-oxide-semiconductor field-effect transistor (MOSFET);
- and
- providing a sensor active region comprising a second well, the second well being part of a second MOSFET that is configured to mirror a current in the first MOSFET;
- wherein the second well is laterally separated from the first well, a distance between an outer edge of the second well and an inner edge of the first well at corners of the second well being less than or equal to the distance between the outer edge of the second well and the inner edge of the first well at sides of the second well.
-61. (canceled)
Dependencies are inferred from the claim text.