High-frequency integrated circuit and electronic device

Abstract

A high-frequency integrated circuit (1) of an embodiment of the present disclosure includes: a high-frequency circuit (10); a terminal (20) electrically coupled to the high-frequency circuit; a first transistor (M1) provided between the terminal and a reference potential line; and a second transistor (M2) provided between the terminal and the reference potential line. The first transistor includes a gate (G) and a drain (D) that are electrically coupled to the terminal, and a source (S) electrically coupled to the reference potential line. The second transistor includes a source (S) electrically coupled to the terminal, and a gate (G) and a drain (D) that are electrically coupled to the reference potential line.

Dependencies are inferred from the claim text.