IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION CAPABILITY AND FABRICATING METHOD THEREOF

An irradiation-resistant GaN HEMT with decoupling reverse conduction capability, comprising a substrate layer, a gallium nitride layer, and a barrier layer which are successively arranged from bottom to top, wherein a strip-shaped p-type gallium nitride layer is arranged on the barrier layer, and a Schottky metal layer and gate metal layers are successively arranged above the p-type gallium nitride layer;

• first ohmic metal layers having different distances to the p-type gallium nitride layer are arranged on two sides of the p-type gallium nitride layer on the barrier layer, wherein the first ohmic metal layers closer to the p-type gallium nitride layer is a source, and the first ohmic metal layers farther to the p-type gallium nitride layer is a drain;
• an interconnection metal layer is arranged above the source and the drain, respectively;
• dielectric layers are filled between the p-type gallium nitride layer, the source and the drain;
• first gate region metal and second gate region metal are sectionally distributed on the p-type gallium nitride layer, wherein the first gate region metal consists of first Schottky metal layers and second ohmic metal layers, the second gate region metal only consists of a second Schottky metal layer, and the first Schottky metal layers and the second Schottky metal layer form the Schottky metal layer;
• the dielectric layers are filled between the first gate region metal and the second gate region metal, a first portion of the interconnection metal layer is arranged above the first gate region metal and is connected to a second portion of the interconnection metal layer above the source to form a reverse freewheeling diode;
• and the gate metal layers are arranged above the second gate region metal and are used as a real gate of the irradiation-resistant GaN HEMT with decoupling reverse conduction capability.