Back to results
US 2025/0169153 A1Published application
Electronic component comprising a gate structure
AssigneeSTMicroelectronics International N.V.
InventorsPhilippe GALY, Franck SABATIER, Michel PIORO-LADRIERE
Life of this patent
Estimating the term…
Abstract
An electronic component includes a gate structure over a semiconductor layer. The gate structure is insulated from the semiconductor layer and includes a layer made of a magnetic material. The electronic component may form a FET transistor, a MOSFET transistor, a SET transistor, a gated diode, a gated MOS structure, or a gated quantum dot.
Claims23
An electronic component, comprising:
- a gate structure on a semiconductor layer, wherein the gate structure includes a first layer made of a magnetic material and a second layer made of polysilicon.
An electronic device, comprising:
- a semiconductor layer;
- an electronic component comprising a metal oxide semiconductor (MOS) structure including a gate structure on the semiconductor layer, wherein the gate structure includes a first layer made of a magnetic material and a second layer made of polysilicon;
- and
- an inductor integrated on the MOS structure.
1 more element
Dependencies are inferred from the claim text.