Integrated circuit device

An integrated circuit device comprising:

• a fin-type active region disposed on a substrate and extending in a first horizontal direction, wherein the first horizontal direction is parallel to an upper surface of the substrate;
• a channel region disposed on the fin-type active region;
• a gate line disposed on the fin-type active region, the gate line surrounding the channel region and extending in a second horizontal direction that crosses the first horizontal direction, wherein the second horizontal direction is parallel to the upper surface of the substrate;
• a first source/drain region disposed on the fin-type active region, a sidewall of the source/drain region being adjacent to the gate line and in contact with the channel region;
• a first backside contact extending from a lower surface of the substrate toward a lower portion of the first source/drain region, wherein the lower surface of the substrate is opposite to the upper surface thereof;
• and
• a first high-concentration doped layer disposed in the lower portion of the first source/drain region,
• wherein the first high-concentration doped layer and the first source/drain region include a first dopant, and
• wherein a concentration of the first dopant in the first high-concentration doped layer is greater than a concentration of the first dopant in the first source/drain region.

An integrated circuit device comprising:

• a fin-type active region disposed on a substrate and extending in a first horizontal direction, wherein the first horizontal direction is parallel to an upper surface of the substrate;
• a plurality of nanosheets disposed on a top surface of the fin-type active region, separated from the top surface of the fin-type active region, and having different distances from the top surface of the fin-type active region in a vertical direction that is perpendicular to the upper surface of the substrate;
• a gate line disposed on the fin-type active region, the gate line surrounding each of the plurality of nanosheets and extending lengthwise in a second horizontal direction that crosses the first horizontal direction, wherein the second horizontal direction is parallel to the upper surface of the substrate;
• a source/drain region adjacent to the plurality of nanosheets in the first horizontal direction;
• a backside contact extending from a lower surface of the substrate toward a lower portion of the source/drain region, wherein the lower surface of the substrate is opposite to the upper surface thereof;
• a high-concentration doped layer disposed in the lower portion of the source/drain region;
• and
• a metal silicide film between the high-concentration doped layer and an upper portion of the backside contact,
• wherein the source/drain region includes:
• a first semiconductor layer contacting the fin-type active region, and
• a second semiconductor layer on the first semiconductor layer,
• wherein the metal silicide film is in contact with the high-concentration doped layer,
• wherein the high-concentration doped layer, the first semiconductor layer, and the second semiconductor layer include a first dopant,
• wherein a first concentration of the first dopant in the first semiconductor layer is less than a second concentration of the first dopant in the second semiconductor layer, and
• wherein a third concentration of the first dopant in the high-concentration doped layer is greater than the second concentration of the first dopant in the second semiconductor layer.