Gate structure with non-linear profile for transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih Ping Wang, Chao-Cheng Chen, Jr-Jung Lin, Chi-Wei Yang
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Abstract
Semiconductor device structures with a gate structure having different profiles at different portions of the gate structure may include a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.
Claims20
A device comprising:
- a substrate;
- an isolation layer on the substrate;
- a protrusion extending above a topmost surface of the isolation layer;
- a gate electrode extending over the protrusion and along respective sidewalls of the protrusion, the gate electrode including an upper portion extending along an upper portion of the protrusion, the upper portion having a linear profile when viewed in cross-section, the gate electrode further having a lower portion extending along a lower portion of the protrusion, the lower portion having a concave profile when viewed in cross-section;
- and
- a gate spacer layer extending along an outer surface of the gate electrode, the gate spacer layer having a profile that is conformal to the profile of the gate electrode.
A device comprising:
- a first finFET formed in a first fin and a second finFET formed in a second fin, the first fin and the second fin extending in a first direction;
- a gate electrode extending in a second direction perpendicular to the first direction, the gate electrode having a first portion extending over the first fin and the second fin, the gate electrode having a second portion extending between the first fin and the second fin, the second portion having a concave sidewall when viewed in cross-section;
- and
- a gate spacer lining the concave sidewall of the gate electrode, the gate spacer also having a concave sidewall when viewed in cross-section.
A device comprising:
- a fin extending from a substrate;
- a gate electrode extending over the fin and along sidewalls of the fin, the gate electrode having a first width above a top surface of the fin and having a second width, less than the first width, below the top surface of the fin;
- and
- a first source/drain region, including an etch stop layer liner, extending from the fin at a first side of the gate electrode and a second source/drain region extending from the fin at a second side of the gate electrode, wherein the distance between the first source/drain region and the second source/drain region is less than that first width.
Dependencies are inferred from the claim text.