Thin film transistor, manufacturing method thereof, and display apparatus comprising the same

A thin film transistor, comprising:

• a base substrate;
• a buffer layer on the base substrate, an upper surface of the buffer layer having a trench;
• an active layer on the buffer layer;
• and
• a gate electrode spaced apart from the active layer and at least partially overlapping the active layer in a plan view;
• wherein the active layer includes:
• a channel area that overlaps the gate electrode in the plan view;
• a source area connected to one side of the channel area in the plan view;
• and
• a drain area connected to the other side of the channel area in the plan view;
• wherein the trench includes:
• a first trench having the source area therein;
• and
• a second trench having the drain area therein;
• wherein the channel area includes:
• a first channel area;
• a second channel area on one side of the first channel area, in contact with the source area, and in the first trench;
• and
• a third channel area on the other side of the first channel area, in contact with the drain area, and in the second trench;
• wherein a shortest distance between an upper surface of the base substrate and the second channel area is shorter than a shortest distance between the upper surface of the base substrate and the first channel area, and
• wherein a shortest distance between the upper surface of the base substrate and the third channel area is shorter than the shortest distance between the upper surface of the base substrate and the first channel area.