Semiconductor device

A semiconductor device, comprising:

• a first electrode extending along a first direction;
• a second electrode extending along the first direction, a second direction from the first electrode to the second electrode crossing the first direction;
• a third electrode extending along the first direction, a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction, the third electrode including a first electrode portion and a second electrode portion, the second electrode portion being electrically connected to the first electrode portion;
• and
• a semiconductor member,
• the semiconductor member including
• a first semiconductor layer including Alx1Ga1−x1N (0≤x1<1), and
• a second semiconductor layer including Alx2Ga1−x2N (0<x2≤1, x1<x2),
• the first semiconductor layer including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region,
• a direction from the first partial region to the first electrode being along a third direction crossing a plane including the first direction and the second direction,
• a direction from the second partial region to the second electrode being along the third direction,
• a direction from the third partial region to the first electrode portion being along the third direction,
• a position of the fourth partial region in the second direction being between a position of the first partial region in the second direction and a position of the third partial region in the second direction,
• the position of the fifth partial region in the second direction being between the position of the third partial region in the second direction and a position of the second partial region in the second direction,
• a position of the third partial region in the first direction being between a position of the seventh partial region in the first direction and a position of the sixth partial region in the first direction,
• the second semiconductor layer including a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion,
• a direction from the fourth partial region to the first semiconductor portion being along the third direction,
• a direction from the fifth partial region to the second semiconductor portion being along the third direction,
• a direction from the sixth partial region to the third semiconductor portion being along the third direction,
• a direction from the seventh partial region to the fourth semiconductor portion being along the third direction,
• the third semiconductor portion being provided between the sixth partial region and the second electrode portion in the third direction,
• at least a part of the first electrode portion being between the first semiconductor portion and the second semiconductor portion in the second direction,
• the at least the part of the first electrode portion being between the fourth semiconductor portion and the third semiconductor portion in the first direction,
• a first electrode portion thickness of the first electrode portion along the third direction being thicker than a second electrode portion thickness of the second electrode portion along the third direction,
• the third electrode further including a third electrode portion,
• the third electrode portion being provided between the first electrode portion and the second electrode portion,
• the third electrode portion being electrically connected to the first electrode portion and the second electrode portion,
• the third electrode portion being provided between the at least the part of the first electrode portion and the third semiconductor portion, and
• the first electrode portion thickness being thicker than a third electrode portion thickness of the third electrode portion along the third direction.