Optimized inner spacer with backside contact
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Julien Frougier, Alexander Reznicek, Daniel Schmidt
Life of this patent
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Abstract
A microelectronic structure that includes a nanosheet transistor. The nanosheet transistor includes a source epi and a drain epi. A first inner spacer located adjacent to the source epi, where the first inner spacer has a first width as measured perpendicular to a gate direction. A second inner spacer located adjacent to the drain epi. The second inner spacer has second width as measured perpendicular to the gate direction. The first width and the second width are different.
Claims20
A microelectronic structure comprising:
- a nanosheet transistor, wherein the nanosheet transistor includes a source epi and a drain epi;
- a first inner spacer located adjacent to the source epi, wherein the first inner spacer has a first width as measured perpendicular to a gate direction;
- and
- a second inner spacer located adjacent to the drain epi, wherein the second inner spacer has second width as measured perpendicular to the gate direction, wherein the first width and the second width are different.
A microelectronic structure comprising:
- a nanosheet transistor, wherein the nanosheet transistor includes a source epi and a drain epi, wherein the nanosheet transistor includes a plurality of channel layers;
- a first inner spacer located adjacent to the source epi, wherein the first inner spacer has a first width as measured perpendicular to a gate direction;
- and
- a second inner spacer located adjacent to the drain epi, wherein the second inner spacer has second width as measured perpendicular to the gate direction, wherein the first width and the second width are different.
A method comprising:
- forming a nanosheet transistor, wherein the nanosheet transistor includes a source epi and a drain epi;
- forming a first inner spacer adjacent to the source epi, wherein the first inner spacer has a first width as measured perpendicular to a gate direction;
- and
- forming a second inner spacer adjacent to the drain epi, wherein the second inner spacer has second width as measured perpendicular to the gate direction, wherein the first width and the second width are different.
Dependencies are inferred from the claim text.