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US 2025/0169144 A1Published application
Semiconductor element with optimized short-circuit capability
OwnerAlberto Martinez-Limia, Dragos Costachescu +4inventors
InventorsAlberto Martinez-Limia, Dragos Costachescu, Jan-Hendrik Alsmeier, Wolfgang Feiler, Holger Bartolf, Stephan Schwaiger
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Abstract
A transistor component, in particular a trench power MISFET. The transistor component includes a substrate preferably made of silicon carbide, silicon, or gallium nitride, a source contact, a drain contact, and a trench structure with a gate.
Claims11
1-10. (canceled)
A transistor component including a trench power MISFET, the transistor component comprising:
- a substrate made of silicon carbide (SiC), or silicon (Si), or gallium nitride (GaN);
- a source contact;
- a drain contact;
- a trench structure with a gate;
- and
- a parallel circuit of at least two unit cells, wherein a contact area of the source contact with a subjacent contiguous source region for a second unit cell of the at least two unit cells is smaller in comparison with a first unit cell of the at least two unit cells.
3 more elements
A method for producing a transistor component, the method comprising the following steps:
- a plurality of method steps for depositing a layer sequence on a substrate,
- wherein a source contact for two adjacent unit cells of the transistor component is configured differently, such that a contact area of the source contact with a subjacent contiguous source region for a second unit cell of the two unit cells is smaller in comparison with a first unit cell of the two unit cells.
Dependencies are inferred from the claim text.