High-Voltage Power Semiconductor Device and Method for Manufacturing the Same

A high-voltage power semiconductor device, comprising:

• a substrate comprising a front side and a back side arranged opposite to each other;
• an epitaxial layer arranged on the front side of the substrate, wherein the epitaxial layer comprises an active region and a terminal region arranged adjacently to each other in a first plane, and the terminal region surrounds the active region;
• a cell functional unit arranged in the active region;
• a plurality of first resistive field plate structures arranged in the active region of the epitaxial layer and extending through the epitaxial layer along a first direction into the substrate, wherein the plurality of first resistive field plate structures extends in the first plane along a second direction;
• a plurality of second resistive field plate structures arranged in the terminal region of the epitaxial layer and extending through the epitaxial layer along the first direction into the substrate, wherein the plurality of second resistive field plate structures is concentrically arranged in the first plane, and the plurality of the second resistive field plate structures discontinuously surrounds the active region in the first plane;
• a third resistive field plate structure arranged on the terminal region of the epitaxial layer and making ohmic contact with a top of each of the plurality of the second resistive field plate structures;
• a first electrode arranged on the active region of the epitaxial layer and making ohmic contact with a top of each of the plurality of the first resistive field plate structures;
• a second electrode arranged on the epitaxial layer at a junction of the active region and the terminal region, wherein the second electrode is in ohmic contact with a side of the third resistive field plate structure close to the active region;
• a third electrode arranged on a side of the terminal region of the epitaxial layer away from the active region and making ohmic contact with the third resistive field plate structure;
• and
• a fourth electrode arranged on the back side of the substrate and making ohmic contact with a bottom of each of the plurality of the first resistive field plate structures and a bottom of each of the plurality of the second resistive field plate structures through the substrate,
• wherein the first plane is parallel to the front side of the substrate, and the first direction is perpendicular to the first plane.