Semiconductor structures having angled dielectric bars attached to nanosheet channel layers

A transistor structure, comprising:

• a substrate;
• one or more nanosheet channel layers disposed over the substrate, the one or more nanosheet channel layers providing channels for a complementary metal-oxide-semiconductor device;
• and
• a dielectric bar attached to the one or more nanosheet channel layers;
• wherein the dielectric bar is not perpendicular to the substrate.

An integrated circuit comprising:

• a transistor structure comprising:
• a substrate;
• one or more nanosheet channel layers disposed over the substrate, the one or more nanosheet channel layers providing channels for a complementary metal-oxide-semiconductor device;
• and
• a dielectric bar attached to the one or more nanosheet channel layers;
• wherein the dielectric bar is not perpendicular to the substrate.