Trench gate power mosfet and manufacturing method therefor

A trench gate power MOSFET, wherein the trench gate power MOSFET is formed in a wafer, comprising:

• a substrate, wherein the substrate is a substrate of a hexagonal wide bandgap semiconductor material having a first conductivity type;
• an epitaxial layer, wherein the epitaxial layer is grown on the substrate and has the first conductivity type;
• a body region, wherein the body region is formed on the epitaxial layer and has a second conductivity type;
• a trench, wherein the trench is formed in the body region by etching, the length direction of the trench is parallel to a projection, on the surface of the wafer, of the C axis;
• a second conductivity-type pillar, wherein the second conductivity-type pillar is formed by implanting first ions into a bottom region of the trench along the C axis of the hexagonal wide bandgap semiconductor material, the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench;
• and
• a trench gate, wherein the trench gate is formed by filling the trench with a filler.