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US 2025/0169119 A1Published application
Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChi-Hsuan Tang, Chung-Ting Huang, Bo-Shiun Chen, Chun-Jen Chen, Yu-Shu Lin
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Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an epitaxial layer adjacent to the gate structure, and then forming a first cap layer on the epitaxial layer. Preferably, a top surface of the first cap layer includes a curve concave upward and a bottom surface of the first cap layer includes a planar surface higher than a top surface of the substrate.
Claims8
A semiconductor device, comprising:
- a gate structure on a substrate;
- an epitaxial layer adjacent to the gate structure;
- a first cap layer on the epitaxial layer, wherein a top surface of the first cap layer comprises a V-shape and two planar surfaces connected to two sides of the V-shape and a bottom surface of the first cap layer comprises a planar surface higher than a top surface of the substrate;
- and
- a contact etch stop layer (CESL) adjacent to the gate structure and on the two planar surfaces and the V-shape of the first cap layer.
2 more elements
Dependencies are inferred from the claim text.