Integrated circuit device and method of manufacturing the same

A method of manufacturing an integrated circuit device, the method comprising:

• forming a source/drain region on a substrate and a source/drain contact on the source/drain region;
• forming, on the source/drain contact, an upper insulating structure comprising an etch stop film and an interlayer insulating film disposed on the etch stop film;
• forming a via hole in the interlayer insulating film;
• forming a horizontal recess in the etch stop film;
• forming a recess portion in a part of the source/drain contact;
• and
• forming a source/drain via contact in the recess portion, in a portion of the horizontal recess, and in the via hole.

An integrated circuit device comprising:

• a fin-type active region extending in a first horizontal direction on a substrate;
• a nanosheet stack facing a fin top surface of the fin-type active region at a position spaced apart from the fin top surface in a vertical direction and comprising at least one nanosheet;
• a gate line surrounding the at least one nanosheet on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction;
• a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line in the first horizontal direction;
• a source/drain contact disposed on the source/drain region;
• a gate dielectric film contacting a bottom surface and side walls of the gate line;
• a pair of insulating spacers disposed on the side walls of the gate line and spaced apart from the gate line in the first horizontal direction with the gate dielectric film disposed therebetween;
• a capping insulating pattern disposed on a top surface of the gate line and a top surface of the gate dielectric film, and between the pair of insulating spacers;
• an upper insulating structure disposed on the capping insulating pattern and the gate line and comprising an etch stop film and an interlayer insulating film;
• and
• a source/drain via contact passing through the upper insulating structure and connected to the source/drain contact,
• wherein the source/drain via contact comprises:
• an upper area passing through the interlayer insulating film;
• and
• a lower area disposed at a lower end portion of the upper area and passing through the etch stop film,
• wherein the etch stop film comprises an air gap surrounding the lower area in a horizontal direction and overlapping the lower area in the horizontal direction.