Modulation-doping-based high mobility atomic layer semiconductor device and manufacturing method therefor

Abstract

Disclosed are a high-mobility atomic layer semiconductor device based on modulation doping and a method for fabricating the same, which prevent a charge scattering phenomenon caused by ionized impurities by modulation doping dopants such that the dopants are spatially separated from a channel layer of an atomic layer semiconductor device having an atomic layer semiconductor heterojunction structure band-aligned. According to an embodiment of the present disclosure, a high-mobility atomic layer semiconductor device based on modulation doping includes a substrate, an atomic layer semiconductor heterojunction structure band-aligned in type I or type II and including a channel layer allowing movement of an electron and a doping layer, wherein the channel layer and the doping layer are stacked on the substrate, and a dopant formed on the doping layer and including a material for supplying an electron or a hole to the channel layer. The dopant is doped while being spatially separated from the channel layer through the doping layer, instead of being directly doped into the channel layer.

Dependencies are inferred from the claim text.