Vertical memory device

A vertical memory device comprising:

• a single-crystal silicon substrate;
• a plurality of single-crystal silicon fillers that are repeatedly disposed along a first horizontal direction and a second horizontal direction and extend along a vertical direction, wherein an end portion of each of the plurality of single-crystal silicon fillers along the vertical direction is connected to the single-crystal silicon substrate, and wherein the first horizontal direction and the second horizontal direction cross each other;
• a plurality of word line plates that are spaced apart from each other on the single-crystal silicon substrate along the vertical direction, overlap each other along the vertical direction, and at least partially surround a portion of a sidewall of each of the plurality of single-crystal silicon fillers;
• and
• a plurality of ovonic threshold switching (OTS) material layers respectively disposed between the plurality of single-crystal silicon fillers and the plurality of word line plates, wherein the OTS material layer are spaced apart from each other along the vertical direction.

A vertical memory device comprising:

• a substrate;
• a first interlayer insulating layer on the substrate;
• a plurality of first bit lines disposed on the first interlayer insulating layer and extending in parallel to each other along a first horizontal direction;
• an etch stop layer on the plurality of first bit lines;
• a stack structure disposed on the etch stop layer and comprising a plurality of isolation insulating layers and a plurality of word line plates which are alternately stacked along a vertical direction;
• and
• a plurality of electrode structures disposed on the substrate,
• wherein each of the plurality of electrode structures comprises:
• a single-crystal silicon filler disposed on the substrate and extending along the vertical direction, penetrating the stack structure, the etch stop layer, the plurality of first bit lines, and the first interlayer insulating layer along the vertical direction, and contacting the substrate;
• and
• a plurality of variable resistance layers spaced apart from each other along the vertical direction, partially covering a sidewall of the single-crystal silicon filler, and respectively disposed between the single-crystal silicon filler and the plurality of word line plates, and
• the vertical memory device further comprises a plurality of second bit lines disposed on the plurality of electrode structures and extending along a second horizontal direction orthogonal to the first horizontal direction.