Semiconductor memory device and electronic system including the same

A semiconductor memory device comprising:

• a substrate;
• a mold stack formed on the substrate, the mold stack including gate electrodes and mold insulating films alternately stacked on the substrate;
• a channel layer which extends through the mold stack in a vertical direction intersecting an upper surface of the substrate;
• and
• an insertion layer which includes an extension part extending in the vertical direction along a side face of the channel layer and a plurality of protrusion parts protruding from the extension part toward each corresponding one of the gate electrodes,
• wherein the extension part and the plurality of protrusion parts each include a ferroelectric material.

An electronic system comprising:

• a main board;
• a semiconductor memory device on the main board;
• and
• a controller which is electrically connected to the semiconductor memory device, the controller disposed on the main board,
• wherein the semiconductor memory device includes:
• a substrate,
• a mold stack formed on the substrate, the mold stack including gate electrodes and mold insulating films alternately stacked on the substrate,
• a channel layer which extends through the mold stack in a vertical direction intersecting an upper surface of the substrate,
• an insertion layer surrounds the channel layer, the insertion layer includes ferroelectrics, and
• a dielectric layer interposed between the insertion layer and the mold insulating films,
• wherein:
• the dielectric layer is disposed at positions corresponding to the gate electrodes;
• and
• the gate electrodes are in contact with the insertion layer.