US 2025/0169074 A1 · BCD INTEGRATED CIRCUIT MANUFACTURING METHOD ENABLING LOW-COST EMBEDDED NONVOLATILE MEMORY

Abstract

One illustrative integrated circuit manufacturing method includes: a sequence of process operations to provide bipolar devices, CMOS (complementary metal oxide semiconductor) devices, and DMOS (double-diffused metal oxide semiconductor) devices on a monolithic integrated circuit substrate; and further operations to provide nonvolatile memory cells on the monolithic integrated circuit substrate with no additional thermal budget, with no additional implant operations, and with only a single additional mask, relative to the sequence of process operations. The sequence of process operations includes one or more ion implantation operations to form wells and/or buried layers for the bipolar devices, the CMOS devices, and the DMOS devices, on a shared integrated circuit substrate; an annealing operation to heal damage from the one or more ion implantation operations before forming sources and drains for the CMOS and DMOS devices; and gate formation operations to form gates for the CMOS devices and the DMOS devices.

Claims20

Dependent claims

An integrated circuit manufacturing method that comprises:

a sequence of process operations to provide bipolar devices, CMOS (complementary metal oxide semiconductor) devices, and DMOS (double-diffused metal oxide semiconductor) devices on a monolithic integrated circuit substrate, the sequence of process operations including:
one or more ion implantation operations to form wells and/or buried layers for the bipolar devices, the CMOS devices, and the DMOS devices, on the monolithic integrated circuit substrate;
an annealing operation to heal damage from the one or more ion implantation operations;
and
gate formation operations to form gates for the CMOS devices and the DMOS devices;
and
further operations to provide nonvolatile memory cells on the monolithic integrated circuit substrate with no additional thermal budget, with no additional implant operations, and with only a single additional mask, relative to the sequence of process operations.

4 more elements

Dependencies are inferred from the claim text.

Bcd integrated circuit manufacturing method enabling low-cost embedded nonvolatile memory

Life of this patent

Bcd integrated circuit manufacturing method enabling low-cost embedded nonvolatile memory

Life of this patent

Abstract

Claims20