Three-dimensional flash memory with reduced wire length and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorYun Heub SONG
Life of this patent
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Abstract
A three-dimensional flash memory is provided, and technique to suppress interference caused by an inter-cell insulation layer in a vertical cell and to form a stable vertical channel layer, a technique to reduce a length of wire than a conventional three-dimensional flash memory for overcoming problems of deterioration of chip characteristics such as operation speed and power consumption and difficulty of wiring technique in the manufacturing process, and a technique to improve horizontal density of channel layers and ONO layers are proposed.
Claims4
A method of manufacturing a three-dimensional flash memory improving integration comprising:
- preparing a mold structure in which a plurality of interlayer insulating layers and a plurality of electrode layers are alternately stacked on a substrate;
- forming at least two string holes penetrating the mold structure to expose the substrate and extending in one direction;
- applying oxide-nitride-oxide (ONO) in the at least two string holes to form at least two ONO layers each including a vertical hole therein and extending in the one direction;
- and
- forming at least two channel layers in the vertical hole of each of the at least two ONO layers and extending in the one direction;
- wherein the forming of the at least two string holes to extend in the one direction includes extending the at least two string holes in the one direction such that the at least two string holes are in contact with each other or a portion of the at least two string holes overlap.
A method of manufacturing a three-dimensional flash memory improving integration comprising:
- preparing a mold structure in which a plurality of sacrificial layers and a plurality of electrode layers are alternately stacked on a substrate;
- forming at least two string holes penetrating the mold structure to expose the substrate and extending in one direction;
- applying oxide-nitride-oxide (ONO) in the at least two string holes to form at least two ONO layers each including a vertical hole therein and extending in the one direction;
- forming at least two channel layers in the vertical hole of each of the at least two ONO layers and extending in the one direction;
- removing the plurality of sacrificial layers;
- and
- filling spaces from which the plurality of sacrificial layers is removed with the plurality of electrode layers,
- wherein the forming of the at least two string holes to extend in the one direction includes extending the at least two string holes in the one direction such that the at least two string holes are in contact with each other or a portion of the at least two string holes overlap.
A method of manufacturing a three-dimensional flash memory improving integration comprising:
- preparing a mold structure in which a plurality of first layers and a plurality of second layers are alternately stacked on a substrate;
- forming at least two string holes penetrating the mold structure to expose the substrate and extending in one direction;
- applying a charge storage material in the at least two string holes to form at least two charge storage layers each including a vertical hole therein and extending in the one direction;
- and
- forming at least two channel layers in the vertical hole of each of the at least two charge storage layers and extending in the one direction;
- wherein the forming of the at least two string holes to extend in the one direction includes extending the at least two string holes in the one direction such that the at least two string holes are in contact with each other or a portion of the at least two string holes overlap,
- wherein each of the plurality of first layers is a interlayer insulating layer, and
- each of the plurality of second layers is a sacrificial layer.
Dependencies are inferred from the claim text.