Semiconductor device using different types of through-silicon-vias

A semiconductor device comprising:

• a semiconductor structure comprising a semiconductor substrate including an active zone having a channel;
• a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal, the TSV structure penetrating the semiconductor substrate;
• and
• power and signal keep-out zones each located a predetermined distance away from the TSV structure and bounded by the active zone to prevent deterioration of electrical characteristics,
• wherein the power keep-out zone includes a first element area located a first distance away from the power TSV that includes a circuit,
• wherein the signal keep-out zone includes a second element area located a second distance away from the signal TSV that includes a circuit,
• wherein an inside of the first element area formed by the first distance is circular,
• wherein an inside of the second element area formed by the second distance is circular, and
• wherein the second distance is longer than the first distance.

A semiconductor device comprising:

• a semiconductor substrate;
• a through silicon via (TSV) structure configured to penetrate the semiconductor substrate, the TSV structure including a power TSV and a signal TSV;
• a first power metal layer connected to an upper portion of the power TSV and configured to supply power;
• a first signal metal layer connected to an upper portion of the signal TSV and configured to supply a signal;
• an active zone included in the semiconductor substrate, wherein the active zone includes a channel;
• a keep-out zone perpendicular to a direction in which the TSV structure is formed and bordering from the TSV structure to the active zone, the keep-out zone comprising power and signal keep-out zones;
• a first element area included in the power keep-out zone;
• and
• a second element area included in the signal keep-out zone,
• wherein the first element area includes a resistance element or a power storage element, and is located a first distance away from the power TSV,
• wherein the second element area includes a resistance element or a power storage element, and is located a second distance longer than the first distance away from the signal TSV,
• wherein an inside of the first element area formed by the first distance is circular, and
• wherein an inside of the second element area formed by the second distance is circular.