US 2025/0169064 A1Published application

Semiconductor devices

AssigneeSamsung Electronics Co., Ltd.

InventorsBitna Kim, Jinbum Kim, Kyeonggyu Lee, Sunguk Jang, Sunghwan Jang, Wonhee Choi

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Abstract

A semiconductor device includes a bit line on a substrate, a channel on the bit line, a first gate structure on a first sidewall of the channel, a contact structure between the bit line and the channel, the contact structure contacting the bit line and the channel, the contact structure including: a first contact including a semiconductor material doped with first impurities, the first impurities including a first diffusion coefficient, and a second contact on the first contact, the second contact contacting the first contact, the second contact including a semiconductor material doped with second impurities, the second impurities including a second diffusion coefficient, the second diffusion coefficient being less than the first diffusion coefficient, and a capacitor on and electrically connected to the channel.

Claims20

Dependent claims

A semiconductor device comprising:

a bit line on a substrate, the bit line extending in a first direction substantially parallel to an upper surface of the substrate;
a channel on the bit line, the channel extending in a third direction substantially perpendicular to the upper surface of the substrate;
a first gate structure on a first sidewall of the channel, the first gate structure extending in a second direction, the second direction substantially parallel to the upper surface of the substrate and intersecting the first direction;
a contact structure between the bit line and the channel, the contact structure contacting the bit line and the channel, the contact structure comprising:
a first contact comprising a semiconductor material doped with first impurities, the first impurities comprising a first diffusion coefficient;
and
a second contact on the first contact, the second contact contacting the first contact, the second contact comprising a semiconductor material doped with second impurities, the second impurities comprising a second diffusion coefficient, the second diffusion coefficient being less than the first diffusion coefficient;
and
a capacitor on and electrically connected to the channel.

6 more elements

A semiconductor device comprising:

a bit line on a substrate, the bit line extending in a first direction substantially parallel to an upper surface of the substrate;
a contact structure on the bit line, the contact structure comprising a first contact and a second contact that contact each other, the first contact comprising a first semiconductor material doped with first impurities, the second contact comprising a second semiconductor material doped with second impurities, the first and second impurities being different from each other;
a channel on and contacting the contact structure;
a first gate structure on a first sidewall of the channel and a second gate structure on a second sidewall of the channel, each of the first gate structure and the second gate structure extending in a second direction substantially parallel to the upper surface of the substrate and intersecting the first direction;
and
a capacitor on and electrically connected to the channel,
wherein a width of the contact structure in the first direction decreases from the upper surface of the substrate towards the capacitor, and
wherein a width of the channel in the first direction decreases from the upper surface of the substrate towards the capacitor.

5 more elements

A semiconductor device comprising:

a bit line on a substrate, the bit line extending in a first direction substantially parallel to an upper surface of the substrate;
a contact structure on the bit line, the contact structure comprising:
a first contact comprising a semiconductor material doped with first impurities comprising a first diffusion coefficient;
and
a second contact on and contacting the first contact, the second contact comprising a semiconductor material doped with second impurities comprising a second diffusion coefficient that is less than the first diffusion coefficient;
a channel on and contacting the contact structure, the channel extending in a vertical direction substantially perpendicular to the upper surface of the substrate;
a first gate structure and a second gate structure on a first sidewall and a second sidewall of the channel, respectively, the first and second sidewalls of the channel facing each other in the first direction, each of the first gate structure and the second gate structure extending in a second direction substantially parallel to the upper surface of the substrate and intersecting the first direction;
and
a capacitor on and electrically connected to the channel.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/735,338Filed 6 Jun 2024
Priority: KR 10-2023-016062720 Nov 2023
Published: 22 May 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10B 12/482
Data lines or contacts therefor: bit lines
H10B 12/0335
The capacitor extending over the transistor: making a connection between the transistor and the capacitor, e.g. plug
H10B 12/05
For one transistor one-capacitor [1T-1C] memory cells: making the transistor
H10B 12/315
Having a storage electrode stacked over the transistor: with the capacitor higher than a bit line

Family

No related US applications are recorded in the indexed filing history.

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