Semiconductor devices

A semiconductor device, comprising:

• a lower structure;
• a capacitor on the lower structure, wherein the capacitor includes first electrode structures, a dielectric layer covering the first electrode structures, and a second electrode structure on the dielectric layer;
• and
• an upper support pattern in contact with the first electrode structures,
• wherein each of the first electrode structures includes:
• a first electrode region extending vertically;
• and
• a second electrode region on the first electrode region,
• wherein the upper support pattern includes a first layer covering upper surfaces of the second electrode regions of the first electrode structures and side surfaces of an upper region of the second electrode region and connected to each other, and
• wherein the first layer has convex portions having a convex upper surface in a vertical direction away from an upper surface of the lower structure and a concave portion having a concave upper surface between the convex portions.

A semiconductor device, comprising:

• a lower structure including a conductive region on a substrate;
• first electrode structures on a lower structure, electrically connected to the conductive region of the lower structure, and extending in a vertical direction;
• support patterns in contact with the first electrode structures;
• a dielectric layer covering the first electrode structures and the support pattern;
• and
• a second electrode structure on the dielectric layer,
• wherein each of the first electrode structures includes a first electrode region and a second electrode region on the first electrode region,
• wherein the support patterns include:
• an intermediate support pattern in contact with side surfaces of upper regions of the first electrode regions of the first electrode structures;
• and
• an upper support pattern in contact with upper surfaces of the second electrode regions of the first electrode structures and side surfaces of upper regions of the second electrode regions of the first electrode structures, and
• wherein, in each of the first electrode structures, a minimum width of the second electrode region is less than a width of an upper region of the first electrode region.