Semiconductor structure and manufacturing method therefor

A manufacturing method for a semiconductor structure, comprising:

• providing a base;
• forming a patterned stacked structure on the base, the patterned stacked structure comprising a first dielectric layer and a first conductive layer that are alternately stacked and whose orthographic projections on the base overlap each other, the first conductive layer comprising a line connection portion and a first conductive line, and the first conductive line being connected to the line connection portion in a first direction;
• and
• forming a staircase structure on the base on a side that is of the line connection portion and that is away from the first conductive line in the first direction, the staircase structure comprising a plurality of stair layer groups that are stacked, the plurality of stair layer groups forming a plurality of stairs distributed in a second direction, each of the stair layer groups comprising a second dielectric layer, a second conductive layer, and a third dielectric layer the second conductive layer being connected to the line connection portion in the first direction, in a same one of the stair layer groups, the third dielectric layer and the second conductive layer being arranged in the second direction and orthographic projections of the third dielectric layer and the second conductive layer on the base overlapping an orthographic projection of the second dielectric layer on the base, the plurality of second conductive layers in the plurality of stair layer groups having a same orthographic projection area on the base, and the second direction intersecting the first direction.