US 2025/0169048 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device may include a first lower active contact, a first source/drain pattern on the first lower active contact, a second lower active contact, a second source/drain pattern on the second lower active contact, a lower conductive layer electrically connected to the first and second lower active contacts, a third source/drain pattern and a fourth source/drain pattern between the first and second source/drain patterns, a first upper active contact on the third source/drain pattern, a second upper active contact on the fourth source/drain pattern, and an upper conductive line electrically connected to the first and second upper active contacts. The first to fourth source/drain patterns, the first and second lower active contacts, and the first and second upper active contacts may be disposed between the lower conductive layer and upper conductive line.

Claims20

Dependent claims

A semiconductor device, comprising:

a first lower active contact;
a first source/drain pattern on the first lower active contact;
a second lower active contact;
a second source/drain pattern on the second lower active contact;
a lower conductive layer electrically connected to the first and second lower active contacts;
a third source/drain pattern and a fourth source/drain pattern between the first and second source/drain patterns;
a first upper active contact on the third source/drain pattern;
a second upper active contact on the fourth source/drain pattern;
and
an upper conductive line electrically connected to the first and second upper active contacts,
wherein the first to fourth source/drain patterns, the first and second lower active contacts, and the first and second upper active contacts are disposed between the lower conductive layer and upper conductive line.

8 more elements

A semiconductor device, comprising:

a first lower insulating layer;
a first word line and a second word line provided in the first lower insulating layer and extended in a first direction;
a second lower insulating layer on the first lower insulating layer;
a first word line connection contact and a second word line connection contact in the second lower insulating layer;
a first lower conductive pattern on the first word line connection contact;
a second lower conductive pattern on the second word line connection contact;
a first insulating pattern surrounding the first lower conductive pattern;
a second insulating pattern surrounding the second lower conductive pattern;
a lower conductive layer on the second lower insulating layer;
a first lower active contact on the lower conductive layer;
a first source/drain pattern on the first lower active contact;
a second lower active contact on the lower conductive layer;
a second source/drain pattern on the second lower active contact;
a first lower gate contact on the first lower conductive pattern;
a first gate electrode on the first lower gate contact;
a second lower gate contact on the second lower conductive pattern;
a second gate electrode on the second lower gate contact;
a third source/drain pattern adjacent to the first gate electrode;
a first upper active contact on the third source/drain pattern;
a first bit line electrically connected to the first upper active contact;
a fourth source/drain pattern adjacent to the second gate electrode;
a second upper active contact on the fourth source/drain pattern;
a second bit line electrically connected to the second upper active contact;
a fifth source/drain pattern adjacent to the first source/drain pattern in the first direction;
a third upper active contact on the fifth source/drain pattern;
a sixth source/drain pattern adjacent to the second source/drain pattern in the first direction;
a fourth upper active contact on the sixth source/drain pattern;
and
an upper conductive line electrically connected to the third and fourth upper active contacts.

26 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20