Light detection element and light detection device

A sensing device, comprising:

• a photodetector comprising an anode electrode and a cathode electrode;
• a first transistor comprising a first end and a second end, wherein
• the first end of the first transistor is coupled to one of the anode electrode or the cathode electrode of the photodetector;
• a second transistor comprising a first end and a second end, wherein
• the first end of the second transistor is coupled to the second end of the first transistor;
• a third transistor comprising a first end and a second end, wherein
• the first end of the third transistor is coupled to the second end of the second transistor, and
• the second end of the third transistor is coupled to a first potential (Vdd);
• a fourth transistor comprising a first end, a second end, and a gate, wherein
• the gate of the fourth transistor is coupled to the second end of the first transistor and the first end of the second transistor;
• a fifth transistor comprising a first end, a second end, and a gate, wherein
• the first end of the fifth transistor is coupled to the second end of the fourth transistor, and
• the second end of the fifth transistor is coupled to the first potential;
• a sixth transistor comprising a first end, a second end, and a gate, wherein
• the first end of the sixth transistor is coupled to a second potential (GND),
• the second end of the sixth transistor is coupled to the first end of the fourth transistor, and
• the gate of the sixth transistor is coupled to the gate of the fifth transistor;
• and
• a first inverter comprising a first end and a second end, wherein
• the first end of the first inverter is coupled to the first end of the fourth transistor and the second end of the sixth transistor,
• the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are a first type and the sixth transistor is a second type different from the first type.