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US 2025/0167783 A1Published application
Driving apparatus
AssigneeFuji Electric Co., Ltd.
InventorMasashi AKAHANE
Life of this patent
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Abstract
Provided is a driving apparatus of a power semiconductor, including: a first circuit; a second circuit; a state signal generation unit that generates a first state signal indicating a state of the first circuit with a digital value of multiple bits; and a communication control unit that controls an output period in which the first circuit outputs the first state signal based on a loaded-state signal indicating a transition timing of ON/OFF of the power semiconductor.
Claims21
A driving apparatus of a power semiconductor, comprising:
- a first circuit;
- a second circuit;
- a state signal generation unit that generates a first state signal indicating a state of the first circuit with a digital value of multiple bits;
- and
- a communication control unit that controls an output period in which the first circuit outputs the first state signal based on a loaded-state signal indicating a transition timing of ON/OFF of the power semiconductor.
2 more elements
A driving apparatus of a power semiconductor, comprising:
- a low side circuit that operates with a first reference voltage,
- a high side circuit that operates with a second reference voltage that is higher than the first reference voltage,
- a state signal generation unit that generates a high side state signal indicating a state of the high side circuit with a digital value of multiple bits, and
- a transmission unit that transmits, by converting a reference voltage of the high side state signal according to the first reference voltage, the high side state signal, which is obtained by converting the reference voltage, to the low side circuit.
1 more element
Dependencies are inferred from the claim text.