High-linearity radio frequency switch circuit, chip and electronic device having same

A radio frequency (RF) switch circuit, comprising a plurality of stages of switch transistor units connected in series, wherein the switch transistor unit in each stage comprises a switch transistor, a gate bias resistor, a bulk bias resistor, a path resistor, a mirror resistor, and a dynamic adjustment unit, wherein

• a gate of each switch transistor is connected to the corresponding gate bias resistor, a drain and a source of each switch transistor are respectively connected to the corresponding path resistors, and a bulk of each switch transistor is connected to the corresponding bulk bias resistor;
• after the gate bias resistors in the stages of switch transistor units are connected in series to each other in sequence, a last gate bias resistor is connected to a gate bias voltage;
• after the bulk bias resistors in the stages of switch transistor units are connected in series to each other in sequence, a last bulk bias resistor is connected to the bulk bias voltage;
• the mirror resistors are connected in series to each other in sequence to form a mirror resistor chain;
• and
• the bulk of each switch transistor is connected to an intermediate terminal of the corresponding dynamic adjustment unit, and a first side terminal and a second side terminal of the dynamic adjustment unit are respectively symmetrically connected across two ends of at least one corresponding series resistor in the mirror resistor chain.