Hybrid filter on chip with integrated passive device (ipd) and film bulk acoustic resonator (fbar)

A method for preparing a hybrid filter on a chip with an integrated passive device (IPD) and a film bulk acoustic resonator (FBAR), comprising:

• (1) preparing a leakage isolation layer on a supporting substrate by deposition;
• (2) obtaining an inductor layer by first physical vapor deposition on the leakage isolation layer prepared in step (1), leaving a window at a bottom of a groove surrounding a cross section of a through glass via (TGV) inductor stack on a mask, and patterning an inductor metal simultaneously;
• (3) forming a first insulating layer on the inductor metal prepared in step (2) by first chemical vapor deposition, and forming lead through holes by photolithography;
• (4) repeating steps (2) and (3) alternately to obtain a three-layer stacked TGV inductor;
• (5) depositing a second insulating layer on the three-layer stacked TGV inductor prepared in step (4) by second chemical vapor deposition to serve as a partition between a capacitor layer and the three-layer stacked TGV inductor;
• (6) depositing two capacitor layers on the second insulating layer deposited in step (5) by second physical vapor deposition, and depositing a third insulating layer between the two capacitor layers to form a metal insulator metal (MIM) capacitor;
• and
• (7) preparing a bulk acoustic wave (BAW) resonator on the MIM capacitor prepared in step (6), and connecting the three-layer stacked TGV inductor, the MIM capacitor and the BAW resonator through the lead through holes to obtain the hybrid filter.