Packages formed using rdl-last process

A structure comprising:

• a device die comprising:
• a conductive pad;
• and
• a first dielectric layer over the conductive pad;
• a deep via comprising:
• a upper portion in the first dielectric layer;
• and
• a lower portion lower than the first dielectric layer;
• a gap-fill material comprising portion on opposing sides of, and contacting, the device die;
• a plurality of dielectric layers over the device die and the gap-fill material;
• and
• a plurality of redistribution lines in the plurality of dielectric layers, wherein the plurality of redistribution lines are electrically coupled to the device die.

A structure comprising:

• a device die comprising:
• a first dielectric layer;
• a second dielectric layer over and contacting the first dielectric layer;
• and
• a metal pad in the second dielectric layer;
• a deep via comprising a vertical-and-straight edge, wherein the vertical-and-straight edge comprises:
• an upper portion in the second dielectric layer;
• and
• a lower portion in the first dielectric layer;
• a gap-fill material contacting the first dielectric layer and the second dielectric layer of the device die;
• a plurality of dielectric layers over the device die and the gap-fill material;
• and
• a plurality of redistribution lines in the plurality of dielectric layers, wherein the plurality of redistribution lines are electrically coupled to the device die and the deep via.