Manufacturing method of semiconductor structure

A manufacturing method of a semiconductor structure, comprising:

• forming a first tier, comprising:
• forming contact pads on an interconnect structure over a semiconductor substrate;
• forming a dielectric material stack on the interconnect structure;
• forming holes and a recess in the dielectric material stack to form a dielectric structure, wherein the holes extended to the contact pads, and the recess is formed between adjacent two of the holes;
• and
• forming first bonding connectors and a first dummy feature by filling conductive materials in the holes and the recess respectively, wherein the first bonding connectors land on the contact pads, and the first dummy feature is between the adjacent two of the first bonding connectors;
• bonding a die component over the first tier;
• and
• forming dielectric encapsulation over the first tier and laterally encapsulating the die component.

A manufacturing method of a semiconductor structure, comprising:

• forming contact pads on an interconnect structure over a semiconductor substrate;
• forming a dielectric material stack on the interconnect structure;
• performing a first patterning process to form first recesses and a second recess formed between adjacent two of the first recesses;
• performing a second patterning process to form vias connected to the first recesses through a patterned mask, wherein the vias and the first recesses jointly form via holes, wherein the via holes accessibly expose portions of the contact pads, and the recess is formed between adjacent two of the via holes;
• and
• forming bonding connectors and a dummy feature by filling conductive materials in the via holes and the recess respectively, wherein the bonding connectors land on the contact pads, and the dummy feature is isolated and between the adjacent two of the bonding connectors.