Soi substrate and related methods
AssigneeSemiconductor Components Industries, LLC
InventorsMichael J. SEDDON, Mark GRISWOLD
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Abstract
Implementations of a method of making a silicon-on-insulator (SOI) die may include forming a plurality of grooves in a second side of a silicon substrate, depositing an insulative layer directly to the second side of the silicon substrate, the insulative layer filling the plurality of grooves, the silicon substrate comprising a first side opposite the second side, and singulating the silicon substrate through the plurality of grooves into a plurality of SOI die. The insulative layer may be coupled to silicon only through the second side of the silicon substrate.
Claims20
A silicon-on-insulator (SOI) die comprising:
- a silicon layer comprising a first side and a second side, the silicon layer comprising a step formed in a plurality of sidewalls of the silicon layer;
- an insulative layer coupled directly to the second side of the silicon layer and within the step, wherein the insulative layer is coupled to silicon only through the second side and the step of the silicon layer;
- wherein the SOI die is singulated;
- and
- wherein the silicon layer is thinned through a backgrinding process.
A silicon-on-insulator (SOI) die comprising:
- a silicon layer comprising a first side and a second side, the silicon layer comprising a step formed in a plurality of sidewalls of the silicon layer;
- an insulative layer coupled directly to the second side of the silicon layer, wherein the insulative layer is coupled to silicon only through the second side and the plurality of steps of the silicon layer;
- and
- wherein the silicon layer is thinned through a backgrinding process;
- wherein the SOI die is singulated;
- wherein the step is formed in an outer perimeter of the silicon layer;
- and
- wherein the silicon layer is less than 35 micrometers thick.
A silicon-on-insulator (SOI) die comprising:
- a silicon layer comprising a first side and a second side, the silicon layer comprising a step formed in a plurality of sidewalls of the silicon layer;
- a conductive layer directly coupled to the second side of the silicon layer and into the step;
- and
- an insulative layer coupled directly to the conductive layer and into the step;
- wherein the silicon layer is thinned through a backgrinding process;
- and
- wherein the SOI die is singulated.
Dependencies are inferred from the claim text.