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US 2025/0167013 A1Published application
Showerhead device for semiconductor processing system
AssigneeASM IP Holding B.V.
InventorsTom E. Blomberg, Varun Sharma
Life of this patent
Estimating the term…
Abstract
To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.
Claims20
A semiconductor processing apparatus for etching, comprising:
- a reaction chamber and a first exhaust port, the first exhaust port configured to remove vapors from the reaction chamber;
- a device connected to the reaction chamber and configured to deliver reactant vapors to the reaction chamber, the device comprising:
- a gas inlet configured to supply the reactant vapors into the device;
- a plate comprising:
- a plurality of inlet ports configured to deliver the reactant vapors to the reaction chamber;
- and
- a plurality of second exhaust ports configured to remove vapors from the reaction chamber;
- and
- a plurality of pumps connected to the first exhaust port and a plurality of outlet apertures, the plurality of pumps configured to remove vapors from the reaction chamber through the first exhaust port and the plurality of outlet apertures at a plurality of pumping speeds, the plurality of pumps configured to modulate the plurality of pumping speeds,
- wherein the ratio of pumping speed of gases through the plurality of outlet apertures to pumping speed of gases through the first exhaust port in the reaction chamber is in a range of 100:1 to 1:100.
7 more elements
A semiconductor processing apparatus for etching, comprising:
- a reaction chamber and a first exhaust port, the first exhaust port configured to remove vapors from the reaction chamber;
- a device connected to the reaction chamber and configured to deliver reactant vapors to the reaction chamber, the device comprising:
- a gas inlet configured to supply the reactant vapors into the device;
- a plate comprising:
- a plurality of inlet ports configured to deliver the reactant vapors to the reaction chamber;
- and
- a plurality of second exhaust ports configured to remove vapors from the reaction chamber;
- a plurality of pumps connected to the first exhaust port and a plurality of outlet apertures, the plurality of pumps configured to remove vapors from the reaction chamber through the first exhaust port and the plurality of outlet apertures at a plurality of pumping speeds, the plurality of pumps configured to modulate the plurality of pumping speeds;
- and
- a control system configured to deliver an etch reactant from an etch reactant source to the reaction chamber,
- wherein the control system is further configured to:
- deliver the etch reactant to a substrate conformally such that etch conformality is greater than 50%, or
- deliver the etch reactant to a substrate selectively such that etch selectivity is greater than 10%.
10 more elements
Dependencies are inferred from the claim text.