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US 2025/0166972 A1Published application
Method and system for plasma process
AssigneeTokyo Electron Limited
InventorsEvrim Solmaz, Du Zhang, Barton Lane
Life of this patent
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Abstract
An example method for a plasma process includes generating plasma within a process chamber with source power (SP) pulses. The source power pulses have a repetition frequency. The method further includes adjusting a neutral flux within the process chamber by changing the repetition frequency of the source power pulses. In some embodiments, the plasma etches a substrate.
Claims20
A method for a plasma process, the method comprising:
- generating plasma within a process chamber with source power (SP) pulses, the SP pulses having a repetition frequency;
- and
- adjusting a neutral flux within the process chamber by changing the repetition frequency of the SP pulses.
A method for an etch process, the method comprising:
- starting a pulsed plasma process with source power (SP) pulses, the SP pulses having a repetition frequency, the pulsed plasma process generating a plasma;
- etching a substrate with the plasma;
- and
- while etching the substrate, continuously changing the repetition frequency of the SP pulses.
1 more element
A method for processing a substrate, the method comprising:
- providing a substrate onto a substrate holder in a process chamber;
- etching an opening into the substrate with a pulsed plasma process, the pulsed plasma process comprising:
- generating a plasma with source power pulses, the plasma comprising carbon, fluorine, oxygen, nitrogen, hydrogen, or argon;
- and
- while generating the plasma, ramping down a repetition frequency of the source power pulses;
- and
- filling the opening with a conductive material.
4 more elements
Dependencies are inferred from the claim text.