Semiconductor device and operating method of the same

A semiconductor device comprising:

• a current direction determination circuit configured to generate an operation signal and a current direction determination signal based on a write command and data;
• a first gate voltage level control circuit configured to provide one of a negative voltage, a first positive voltage, and a second positive voltage to a gate of at least one of column transistors based on the operation signal and the current direction determination signal;
• and
• a first back bias voltage level control circuit configured to provide one of the negative voltage and a ground voltage as a back bias voltage of the at least one of the column transistors based on the operation signal and the current direction determination signal.

An operating method of a semiconductor device, comprising:

• providing a positive voltage to a first node;
• providing a negative voltage to a second node;
• connecting the first node to a bit line that is electrically connected to a first end of a memory cell by providing a second positive voltage to a gate of a column transistor;
• and
• connecting the second node to a word line that is electrically connected to a second end of the memory cell by providing a first positive voltage to a gate of a row transistor, the first positive voltage having a lower voltage level than the second positive voltage.

An operating method of a semiconductor device, comprising:

• providing a negative voltage to a first node;
• providing a positive voltage to a second node;
• connecting the first node to a bit line that is electrically connected to a first end of a memory cell by providing a first positive voltage to a gate of a column transistor;
• and
• connecting the second node to a word line that is electrically connected to a second end of the memory cell by providing a second positive voltage to a gate of a row transistor, the second positive voltage having a higher voltage level than the first positive voltage.