Memory devices with flying decorder lines and methods for operating the same

A memory device, comprising:

• a memory array including a plurality of first memory cells and a plurality of second memory cells;
• a memory controller physically located next to the first memory cells, with the second memory cells physically located opposite the first memory cells from the memory controller along a first direction, wherein the memory controller is configured to provide a plurality of decode signals to the memory array;
• and
• a plurality of first decoder lines disposed in a first metallization layer and extending in the first direction;
• wherein each of the first decoder lines includes at least a first segment and a second segment operatively coupled to the first memory cells and the second memory cells, respectively.

A method for forming a memory device, comprising:

• forming a memory array in a first area of a substrate;
• forming a circuit portion of a decoder in a second area of the substrate;
• and
• forming a number of metallization layers over the substrate, wherein a number of decoder lines, each of which includes a first segment and a second segment separated from each other along a first lateral direction, are formed in a first one of the metallization layers,
• wherein the first segment and second segment of each decoder line are operatively coupled to a first portion and a second portion of the memory array, respectively.