US 2025/0165341 A1 · NONVOLATILE MEMORY DEVICE, OPERATING METHOD OF NONVOLATILE MEMORY DEVICE, AND OPERATING METHOD OF STORAGE DEVICE

Abstract

An operating method of a storage device including a nonvolatile memory device and a storage controller includes transmitting, by the storage controller, a set-feature command including error detection activation information to the nonvolatile memory device, transmitting, by the storage controller, a program command and write data to the nonvolatile memory device, performing, by the nonvolatile memory device, an error detection operation on the write data of a page buffer circuit before programming the write data to memory cells, in response to the program command, transmitting, by the nonvolatile memory device, the write data as error data to the storage controller when an error is detected in the write data, and programming, by the nonvolatile memory device, the write data to the memory cells when an error is not detected in the write data.

Claims20

Dependent claims

An operating method of a storage device including a nonvolatile memory device and a storage controller, the operating method comprising:

transmitting, by the storage controller, error detection activation information to the nonvolatile memory device;
transmitting, by the storage controller, a program command and write data to the nonvolatile memory device;
performing, by the nonvolatile memory device, an error detection operation on the write data in a page buffer circuit based on the error detection activation information;
transmitting, by the nonvolatile memory device, the write data as error data to the storage controller based on an error being detected in the write data;
and
programming, by the nonvolatile memory device, the write data to memory cells in the nonvolatile memory device based on an error not being detected in the write data.

3 more elements

An operating method of a nonvolatile memory device, the operating method comprising:

receiving error detection activation information from a storage controller;
receiving a program command and write data from the storage controller;
performing, based on error detection activation information, an error detection operation by detecting whether a same pattern repeats in the write data of a page buffer circuit;
based on an error being detected in the write data, transmitting the write data as error data to the storage controller;
and
based on an error being not detected in the write data, programming the write data to memory cells in nonvolatile memory device.

3 more elements

A nonvolatile memory device comprising:

a memory cell array comprising a plurality of memory cells;
an input/output circuit configured to receive write data from a storage controller;
a page buffer circuit connected to the memory cell array and configured to temporarily store the write data from the input/output circuit;
and
an error detection circuit configured to:
receive error detection activation information from the storage controller,
perform, based on error detection activation information, an error detection operation by detecting whether a same pattern in the write data repeats before programming the write data to the memory cell array,
based on an error being detected in the write data, transmit the write data as error data to the storage controller, and
based on an error being not detected in the write data, program the write data to the memory cells.

6 more elements

Dependencies are inferred from the claim text.

Nonvolatile memory device, operating method of nonvolatile memory device, and operating method of storage device

Life of this patent

Nonvolatile memory device, operating method of nonvolatile memory device, and operating method of storage device

Life of this patent

Abstract

Claims20