A hybrid silicon photonics modulator and method to manufacture the same
AssigneeAdvanced Micro Foundry Pte. Ltd.
InventorsShawn Yohanes SIEW, Xianshu LUO, Patrick Guo Qiang LO
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Abstract
The present disclosure relates generally to a hybrid modulator and methods of integrating hybrid materials, such as lithium-niobate-on-insulator, onto silicon-on-insulator (SOI) wafers for hybrid silicon photonics integration, while maintaining compatibility with standard silicon photonics components. In particular, the silicon on insulator (SOI) and lithium-niobate-on-insulator (LNOI) are bonded together to allow the modulator to be compatible with lithium-niobate devices or silicon devices via a single transition layer.
Claims22
A hybrid silicon photonics modulator comprising:
- a first part comprising a first substrate layer, a first oxide layer, and a waveguide, wherein the first oxide layer comprises one or more etched regions;
- a second part comprising a second substrate layer, a second oxide layer and a non-CMOS material layer, wherein the non-CMOS material layer comprises one of a lithium niobate layer, a Ill-IV material, and a nonlinear crystal material;
- and
- at least two electrodes,
- wherein the non-CMOS material layer is bonded to the second oxide layer directly and to the at least two electrodes directly, and also physically separated from the first oxide layer by the at least two electrodes, or the non-CMOS material layer is bonded to the second oxide layer directly and to the first part directly, and also separated from the at least two electrodes by the second oxide layer.
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A method for manufacturing a hybrid silicon photonics modulator comprising one or more steps of:
- forming a first part comprising a first substrate layer, a first oxide layer, and a waveguide, wherein the first oxide layer comprises one or more etched regions;
- forming a second part comprising a second substrate layer, a second oxide layer and a non-CMOS material layer, wherein the non-CMOS material layer comprises one of a lithium niobate layer, a Ill-IV material, and a nonlinear crystal material;
- and,
- forming at least two electrodes;
- wherein the non-CMOS material layer is bonded to the second oxide layer directly, and to the at least two electrodes directly, and also physically separated from the first oxide layer by the at least two electrodes, or the non-CMOS material layer is bonded to the second oxide layer directly, and to the first part directly, and also separated from the at least two electrodes by the second oxide layer.
Dependencies are inferred from the claim text.