US 2025/0164439 A1Published application

Fet gas sensor device

AssigneeSwesensi AB

InventorsZhen ZHANG, Qitao HU

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Abstract

A field effect transistor, FET, gas sensor device (100) arranged to sense gas, and a method of sensing gas by a FET gas sensor device, are provided. The FET gas sensor device comprises at least one gate (110a, 110b), a source (120), a drain (130), and a semiconductor channel (140). The semiconductor channel and the gate(s) form a FET channel-gate coupling (150) by which an applied gate potential is arranged to control a current flowing through the semiconductor channel. The FET gas sensor device further comprises space(s) (200) arranged between the gate(s) and the semiconductor channel and configured to receive gas, whereby received gas is arranged to influence electrical property(ies) of the FET channel-gate coupling, and wherein the FET gas sensor device is arranged to sense gas based on the influenced electrical property(ies) of the FET channel-gate coupling.

Claims18

Dependent claims

A field effect transistor, FET, gas sensor device arranged to sense gas, comprising

at least one gate,
a source,
a drain,
a semiconductor channel arranged between the source and the drain, wherein the semiconductor channel and the at least one gate form a FET channel-gate coupling by which an applied gate potential is arranged to control a current flowing through the semiconductor channel,
at least one space arranged between the at least one gate and the semiconductor channel,
a substrate,
wherein the at least one gate, the semiconductor channel, the at least one space, and at least one of the source and the drain, are arranged in a same plane parallel to a surface of the substrate,
wherein the at least one space is configured to receive gas, and
at least one layer provided on at least a portion of the semiconductor channel, wherein the at least one layer comprises
a first layer comprising metal nanoparticles, wherein the first layer is arranged to interact with gas received in the at least one space, and
a third layer, wherein the third layer is dielectric and is arranged to passivate a surface of the semiconductor channel, wherein the third layer is provided on at least a portion of the semiconductor channel, and the first layer is arranged on at least a portion of the third layer,
wherein the at least one layer comprises a portion provided on a surface of the semiconductor channel facing a gate of the at least one gate,
whereby gas, received in the at least one space, is arranged to influence at least one electrical property of the FET channel-gate coupling, and wherein the FET gas sensor device is arranged to sense gas based on the influenced at least one electrical property of the FET channel-gate coupling.

10 more elements

A method of sensing gas by a field effect transistor, FET, gas sensor device comprising at least one gate, a source, a drain, a semiconductor channel arranged between the source and the drain, wherein the semiconductor channel and the at least one gate form a FET channel-gate coupling by which a gate potential is arranged to control a current through the semiconductor channel, at least one space arranged between the at least one gate and the semiconductor channel, and a substrate, wherein the at least one gate, the semiconductor channel, the at least one space, and at least one of the source and the drain, are arranged in a same plane parallel to a surface of the substrate, wherein the FET gas sensor device further comprises at least one layer provided on at least a portion of the semiconductor channel, wherein the at least one layer comprises a first layer comprising metal nanoparticles, wherein the first layer is arranged to interact with gas received in the at least one space, and a third layer, wherein the third layer is dielectric and is arranged to passivate a surface of the semiconductor channel, wherein the third layer is provided on at least a portion of the semiconductor channel, and the first layer is arranged on at least a portion of the third layer, wherein the at least one layer comprises a portion provided on a surface of the semiconductor channel facing a gate of the at least one gate, the method comprising

biasing the source and the drain with a first voltage for generating a current flowing through the semiconductor channel,
biasing the gate with a second voltage and controlling the current flowing through the semiconductor channel via a FET channel-gate coupling formed by the semiconductor and the at least one gate,
receiving gas in the at least one space, whereby gas, received in the at least one space, is arranged to influence at least one electrical property of the FET channel-gate coupling,
sensing gas based on the influenced at least one electrical property of the FET channel-gate coupling.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 18/874,322Filed 14 Jun 2023
Priority: SE 2230197-215 Jun 2022
Published: 22 May 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

G01N 27/4143
Specially adapted for gases: air gap between gate and channel, i.e. suspended gate [SG] FETs
G01N 27/4146
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS: involving nanosized elements, e.g. nanotubes, nanowires
G01N 33/005
Specially adapted to detect a particular component: h2
G01N
Investigating or analysing materials by determining their chemical or physical properties

Family

US 12,761,181 B2Related patent
US 2025/0164439 A1This patent

From the US filing history. Foreign family members aren’t listed.

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