Preparation method of perovskite/silicon heterojunction tandem solar cell

A method for preparing the perovskite/silicon heterojunction tandem solar cell, comprising a preparation method of the n-i-p tandem structure and a preparation method of the p-i-n tandem structure, where the preparation method of the n-i-p tandem structure comprises following steps:

• (1) carrying out surface texturing treatment on an N-type crystalline silicon wafer;
• (2) carrying out passivation on both sides of the N-type crystalline silicon wafer, and growing the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer on the both sides of the passivated N-type crystalline silicon wafer by PECVD;
• (3) growing the p-type heavily-doped amorphous silicon layer and the n-type heavily-doped amorphous silicon layer on the second intrinsic amorphous silicon layer sequentially;
• (4) growing the n-type doped amorphous silicon layer on one side of the first intrinsic amorphous silicon layer away from the N-type crystalline silicon wafer;
• (5) growing the first electron transport layer and the second electron transport layer on a surface of the n-type heavily-doped amorphous silicon layer;
• (6) preparing the perovskite absorber layer on the second electron transport layer;
• (7) preparing the first hole transport layer and the second hole transport layer on the perovskite absorber layer sequentially;
• (8) preparing the first transparent conductive layer on one side of the n-type doped amorphous silicon layer away from the first intrinsic amorphous silicon layer, and preparing the second transparent conductive layer on the second hole transport layer;
• and
• (9) preparing a metal electrode layer on surfaces of the first transparent conductive layer and the second transparent conductive layer respectively;
• the preparation method of the p-i-n tandem structure comprises following steps:
• (1) carrying out surface texturing treatment on an N-type crystalline silicon wafer;
• (2) carrying out passivation on both sides of the N-type crystalline silicon wafer, and growing the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer on the both sides of the passivated N-type crystalline silicon wafer by PECVD;
• (3) growing the n-type heavily-doped amorphous silicon layer and the p-type heavily-doped amorphous silicon layer on the second intrinsic amorphous silicon layer sequentially;
• (4) growing the p-type doped amorphous silicon layer on one side of the first intrinsic amorphous silicon layer away from the N-type crystalline silicon wafer;
• (5) growing the first hole transport layer and the second hole transport layer on a surface of the p-type heavily-doped amorphous silicon layer;
• (6) preparing the perovskite absorber layer on the second hole transport layer;
• (7) preparing the first electron transport layer and the second electron transport layer on the perovskite absorber layer sequentially;
• (8) preparing the first transparent conductive layer on one side of the p-type doped amorphous silicon layer away from the first intrinsic amorphous silicon layer, and preparing the second transparent conductive layer on the second electron transport layer;
• and
• (9) preparing the metal electrode layer on the surfaces of the first transparent conductive layer and the second transparent conductive layer respectively.