Light-emitting diode, display device including the light-emitting diode, and method for manufacturing the display device

A display device comprising:

• a complementary metal oxide semiconductor (CMOS) wafer;
• and
• a plurality of light-emitting diodes disposed on the CMOS wafer, wherein
• each of the plurality of light-emitting diodes includes:
• a first electrode part;
• a second electrode part disposed on the first electrode part;
• and
• a semiconductor junction structure disposed between the first electrode part and the second electrode part,
• the semiconductor junction structure includes:
• a first semiconductor layer;
• a second semiconductor layer disposed on the first semiconductor layer;
• a third semiconductor layer disposed on the second semiconductor layer;
• an optical layer;
• and
• an active layer spaced apart from the optical layer in a thickness direction,
• any one of the optical layer and the active layer is disposed between the first semiconductor layer and the second semiconductor layer,
• another one of the optical layer and the active layer is disposed between the second semiconductor layer and the third semiconductor layer,
• the optical layer includes:
• a porous layer;
• and
• a non-porous layer disposed on the porous layer, and
• in a direction perpendicular to the thickness direction, a first width of the porous layer is greater than a second width of the non-porous layer.

A method for manufacturing a display device, the method comprising:

• preparing a CMOS wafer including a first silicon substrate and a conductive layer disposed on the first silicon substrate;
• preparing a semiconductor substrate including:
• a preliminary semiconductor junction structure;
• and
• a second silicon substrate disposed on the preliminary semiconductor junction structure;
• coupling the CMOS wafer and the semiconductor substrate;
• dry etching the preliminary semiconductor junction structure to form a semiconductor junction structure;
• forming a second electrode part;
• and
• forming a first electrode part, wherein
• the forming of the second electrode part is performed simultaneously or after the forming of the semiconductor junction structure,
• the semiconductor junction structure includes:
• a first semiconductor layer;
• a second semiconductor layer formed on the first semiconductor layer;
• a third semiconductor layer formed on the second semiconductor layer;
• an optical layer;
• and
• an active layer spaced apart from the optical layer in a thickness direction,
• any one of the optical layer and the active layer is formed between the first semiconductor layer and the second semiconductor layer,
• another one of the optical layer and the active layer is formed between the second semiconductor layer and the third semiconductor layer, and
• the optical layer includes:
• a porous layer;
• and
• a non-porous layer disposed on the porous layer, and
• the porous layer and the non-porous layer are formed through electro-chemical etching after the dry etching of the preliminary semiconductor junction structure.