Light-emitting device with central electrode and optical cavity

A light-emitting element comprising:

• a semiconductor light-emitting diode (LED) that includes a p-doped semiconductor layer, an n-doped semiconductor layer, and an active, light-emitting layer between the p-doped and n-doped layers, the LED being arranged for emitting light at a nominal emission vacuum wavelength λ0 resulting from radiative recombination of charge carriers at the active layer, the LED having (i) a light-exit surface of the n-doped layer opposite the active layer, (ii) an anode contact surface of the p-doped layer opposite the active layer, and (iii) side surfaces that laterally confine the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer, the active layer extending to the side surfaces;
• an anode electrical contact electrically coupled to the p-doped layer on a central area of the anode contact surface leaving peripheral portions of the anode contact surface without direct electrical coupling to the anode electrical contact;
• a cathode electrical contact electrically coupled to the n-doped layer;
• and
• reflective or scattering layers on peripheral portions of the light-exit surface, at least portions of the anode contact surface, or at least positions of the side surfaces, the reflective or scattering layer on the light-exit surface having a central opening therethrough, at least a portion of the central opening being positioned opposite at least a portion of the central area of the anode contact surface, the reflective or scattering layers forming an optical cavity at least partly enclosing the n- and p-doped semiconductor layers and the active layer.