Semiconductor light-emitting element

A semiconductor light-emitting element, including:

• a substrate, defining a thickness direction;
• a first distributed Bragg reflector (DBR), disposed on a side of the substrate in the thickness direction, including a plurality of pairs of semiconductor layers;
• an active layer, disposed on a side of the first DBR opposite to the substrate;
• a second DBR, disposed on a side of the active layer opposite to the first DBR in the thickness direction, including a plurality of pairs of semiconductor layers, a reflectivity of the second DBR being greater than a reflectivity of the first DBR;
• a first contact layer, disposed between the substrate and the first DBR;
• a second contact layer, disposed on a side of the second DBR opposite to the active layer in the thickness direction;
• a first metal layer, electrically connected with the first contact layer;
• and
• a second metal layer, electrically connected with the second contact layer;
• wherein a light emitting side of the semiconductor light-emitting element is located at a side of the substrate remote from the first DBR;
• the first contact layer, the first DBR, the active layer, the second DBR and the second contact layer are stacked layer by layer in the thickness direction to form a columnar structure, the columnar structure defines a central axis, the semiconductor light-emitting element further includes an insulating layer at least partially covered on an outer surface of the columnar structure, the insulating layer defines an embedding groove open in the thickness direction, and a connecting portion of the second metal layer is embedded within the embedding groove and connected with the second contact layer;
• wherein the second DBR further includes a metal diffusion layer, the metal diffusion layer is located at a side of at least one of the second contact layer and the plurality of pairs of semiconductor layers close to the second metal layer, and the metal diffusion layer extends and diffuses in a direction remote from the second metal layer.