Production method, optoelectronic semiconductor component, and carrier

A method for manufacturing a semiconductor device, the method comprising:

• providing a circuit board having a first main side and a second main side as well as metallic electrical contact structures located on the first main side;
• applying electrical compensation structures to the first main side directly on at least some of the contact structures, the compensation structures projecting beyond the respective one of the contact structures in the direction parallel to the first main side,
• wherein a distance between adjacent compensation structures assigned to one another is at most 50 μm and is smaller than a distance between adjacent contact structures assigned to one another;
• and
• applying at least one optoelectronic semiconductor chip directly to the compensation structures assigned to one another,
• wherein the contact structures and the assigned at least one semiconductor chip do not overlap when viewed from above on the first main side.

An optoelectronic semiconductor device comprising:

• a circuit board having a first main side, a second main side and metallic electrical contact structures located on the first main side;
• electrical compensation structures located on the first main side directly on at least some of the contact structures so that the compensation structures project beyond the associated contact structures in a direction parallel to the first main side;
• and
• optoelectronic semiconductor chips located on the mutually associated compensation structures,
• wherein the optoelectronic semiconductor chips are configured to generate light and have a size of at most 0.1 mm×0.2 mm when viewed from above onto the first main side,
• wherein each of-the optoelectronic semiconductor chips has a chip contact surface facing the first main side, wherein the chip contact surfaces are attached to the associated compensation structures, and
• wherein a distance between adjacent, mutually associated compensation structures is at most 50 μm and is smaller than a distance between adjacent, mutually associated contact structures.

A method for manufacturing a semiconductor device, the method comprising:

• providing a circuit board having a first main side and a second main side as well as metallic electrical contact structures located on the first main side;
• applying electrical compensation structures to the first main side directly on at least some of the contact structures, the compensation structures projecting beyond the respective one of the contact structures in a direction parallel to the first main side,
• wherein a distance between adjacent compensation structures assigned to one another is at most 50 μm and is smaller than a distance between adjacent contact structures assigned to one another;
• applying at least one semiconductor chip directly to the compensation structures assigned to one another,
• wherein the contact structures and the assigned at least one semiconductor chip do not overlap when viewed from above on the first main side,
• wherein the optoelectronic semiconductor chips are configured to generate light and have a size of at most 0.1 mm×0.2 mm when viewed from above onto the first main side,
• wherein each of the optoelectronic semiconductor chips has a chip contact surface on a mounting side facing the first main side, wherein the chip contact surfaces are attached to the associated compensation structures;
• and
• hardening the compensation structures only after the optoelectronic semiconductor chips have been applied and fixing the optoelectronic semiconductor chips to the circuit board by hardening of the compensation structures.